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06:34 ECS 220 3a:5-5.2 circuit to simulate Turing… ECS 220 3a:5-5.2 circuit to simulate Turing machine, Witness-Existence reduces to Circuit-SAT	ECS 220 3a:5-5.2 circuit to simulate Turing machine, Witness-Existence reduces to Circuit-SAT tape circuit machine turing input gates subcircuit configuration witness space steps inputs cells bits head constants output symbol blanks width From David Doty on March 21st, 2021 0 likes 17 plays 0
03:43 ECS 120 8c:4 Cook-Levin Theorem if P neq NP, then… ECS 120 8c:4 Cook-Levin Theorem if P neq NP, then no NP-complete problem is in P	ECS 120 8c:4 Cook-Levin Theorem if P neq NP, then no NP-complete problem is in P reduction notes lecture problem np theorem problems cook question sat clique reductions levin complete object sense couple age examples width From David Doty on March 20th, 2021 0 likes 1 plays 0
02:46 Discussion-12-01-A Discussion-12-01-A	Discussion-12-01-A length cluster clusters dendrograms width distance kind species class method clustering thing symbol festival fluids identity hold language noodles hill From Dhruvatara Bhogishetty on December 1st, 2020 0 likes 46 plays 0
19:04 Discussion 10-30 Discussion 10-30	Discussion 10-30 network validation function layer neuron training model testing accuracy activation neurons values batch layers kind epochs width batches callback input From Dhruvatara Bhogishetty on October 30th, 2020 0 likes 169 plays 0
23:00 Lab7_Part2 Lab7_Part2	Lab7_Part2 output adc input sample voltage cycle clock pulse width size end runtime millisecond frequency period dc simulation buffer point resistor From Hooman Rashtian on August 25th, 2020 0 likes 16 plays 0
14:20 Brett Hodges Research Talk (2020 Larock… Brett Hodges Research Talk (2020 Larock Conference, Physical/Analytical Presentation #3)	Brett Hodges Research Talk (2020 Larock Conference, Physical/Analytical Presentation #3) Title: Measurement of the space-charge region width in BiVO4 particle films with surface photovoltage spectroscopy Authors: Brett Hodges, Rachel Doughty, Anna Kundmann, and Frank E. Osterloh … region charge film space semiconductor films band surface width electrons interface energy signal degrees celsius field water bismuth material volts From Lee-Ping Wang on May 16th, 2020 0 likes 5 plays 0
10:29 MOS Transistors (Part 7: Channel-Length… MOS Transistors (Part 7: Channel-Length Modulation)	MOS Transistors (Part 7: Channel-Length Modulation) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering channel transistor vds length threshold voltage drain effect lambda point width base vgs modulation term vce current equation source slope From Hooman Rashtian on April 14th, 2020 1 likes 44 plays 0
06:29 Bipolar Transistors (Part 5: Early Effect) Bipolar Transistors (Part 5: Early Effect)	Bipolar Transistors (Part 5: Early Effect) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering vce region voltage electrons increases slope profile depletion transistor gradient effect base volt ic equation width collector vbe dependency side From Hooman Rashtian on April 14th, 2020 0 likes 79 plays 0
07:49 PN Junction (Part 5: Forward Bias) PN Junction (Part 5: Forward Bias)	PN Junction (Part 5: Forward Bias) region vd junction depletion bias times current holes diffusion width reverse power equation voltage electrons atoms boron ions side terminal From Hooman Rashtian on April 14th, 2020 0 likes 41 plays 0
09:45 PN Junction (Part 3): Reverse Bias PN Junction (Part 3): Reverse Bias	PN Junction (Part 3): Reverse Bias junction region side depletion battery capacitance bias naught capacitor plates electrons voltage equation equilibrium distance silicon material dielectric width holes From Hooman Rashtian on April 14th, 2020 0 likes 46 plays 0