Color centers are point defects in a crystal lattice that exhibit properties that are useful in quantum technologies. We are building a confocal photoluminescence spectroscopy setup to characterize silicon vacancy centers in silicon carbide. We use milliwatt laser diode as a pump light source and filter the collected signal to observe 850-950nm emission. The signal is analyzed on a spectrometer with an InGaAs CCD camera. These emitters have applications in quantum light sources and quantum repeaters.
