Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann

From Philip Young April 02, 2022

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Color centers are point defects in a crystal lattice that exhibit properties that are
useful in quantum technologies. We are building a confocal photoluminescence
spectroscopy setup to characterize silicon vacancy centers in silicon carbide. We use
milliwatt laser diode as a pump light source and filter the collected signal to observe
850-950nm emission. The signal is analyzed on a spectrometer with an InGaAs CCD
camera. These emitters have applications in quantum light sources and quantum
repeaters.

Appears In: ECExpo 2022

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Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann

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