Color centers are defects in silicon carbide (and other wide bandgap materials), that emerged as nearly-identical quantum emitters. Silicon carbide owing to its decades-long industrial presence, high thermal conductivity, strong second-order non-linearity and infrared emitting color centers, is an attractive material for color center nanophotonic integration, needed for quantum information processing applications. A key requirement for nanophotonic integration is the ability to grow high quality, high refractive index thin films to create confinement in nanostructures. Although the growth of high-quality silicon carbide wafers is possible, the ability to grow high quality heteroepitaxial thin films of silicon carbide in a scalable way has not been demonstrated. A recent and less explored method - angle-etching method, has been shown to resolve the challenges caused by the unavailability of heteroepitaxial thin films. In this work, we use Finite-Difference Time-Domain (FDTD) method to design a triangular cross-section photonic crystal cavity with ultra-high Q-factors, small mode volumes and resonant wavelengths in the telecommunications wavelength range. We then explore a photonic molecule formed by stacking two photonic cavities adjacent to each other with reduced number of holes at their interface, suitable for cavity Quantum Electrodynamics (cQED) applications. We then discuss our nanofabrication approach and initial results to integrate color centers into nanopillar structures for improving collection efficiencies of photons from the color center emission.