05:40 duration 5 minutes 40 seconds
Nanophotonic Devices in 4H-SiC with Integrated…
Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety
Color centers are defects in silicon carbide (and other wide bandgap materials), that emerged as nearly-identical quantum emitters. Silicon carbide owing to its decades-long industrial presence, high…
08:35 duration 8 minutes 35 seconds
Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing
Photonic and Electronic Devices 15 Team Lead: Victoria Norman Advisor: Prof. Radulaski