01:17
A 200-GHz Stacked-FET Power Amplifier with 18.7…
A 200-GHz Stacked-FET Power Amplifier with 18.7 dBm Output Power and 4.8% PAE in 45-nm CMOS SOI- Saleh Hasanzade Yamchi
Abstract—We report a fully integrated power amplifier (PA) in 45-nm CMOS SOI. Both stacking and parallel power combining are utilized to achieve 18.7 dBm peak output power. Each PA unit uses…
05:17
High Gain/ Power Amplifier Design At High Mm-wave…
High Gain/ Power Amplifier Design At High Mm-wave And Terahertz Frequencies: Embedded Power Amplification
RF-to-THz Electronics and Waves 11 Team Lead: Hadi Bameri Advisor: Prof. Momeni
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