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A 200-GHz Stacked-FET Power Amplifier with 18.7… duration 1 minute 17 seconds A 200-GHz Stacked-FET Power Amplifier with 18.7… A 200-GHz Stacked-FET Power Amplifier with 18.7 dBm Output Power and 4.8% PAE in 45-nm CMOS SOI- Saleh Hasanzade Yamchi	A 200-GHz Stacked-FET Power Amplifier with 18.7 dBm Output Power and 4.8% PAE in 45-nm CMOS SOI- Saleh Hasanzade Yamchi Abstract—We report a fully integrated power amplifier (PA) in 45-nm CMOS SOI. Both stacking and parallel power combining are utilized to achieve 18.7 dBm peak output power. Each PA unit uses… ecexpo 2022 +20 More From Philip Young 0 likes 90 plays 0
High Gain/ Power Amplifier Design At High Mm-wave… duration 5 minutes 17 seconds High Gain/ Power Amplifier Design At High Mm-wave… High Gain/ Power Amplifier Design At High Mm-wave And Terahertz Frequencies: Embedded Power Amplification	High Gain/ Power Amplifier Design At High Mm-wave And Terahertz Frequencies: Embedded Power Amplification RF-to-THz Electronics and Waves 11 Team Lead: Hadi Bameri Advisor: Prof. Momeni power +19 More From Femi-Jide Akinmoladun 0 likes 41 plays 0

A 200-GHz Stacked-FET Power Amplifier with 18.7 dBm Output Power and 4.8% PAE in 45-nm CMOS SOI- Saleh Hasanzade Yamchi