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A 200-GHz Stacked-FET Power Amplifier with 18.7 dBm Output Power and 4.8% PAE in 45-nm CMOS SOI- Saleh Hasanzade Yamchi

Abstract—We report a fully integrated power amplifier (PA) in 45-nm CMOS SOI. Both stacking and parallel power combining are utilized to achieve 18.7 dBm peak output power. Each PA unit uses…

From  Philip Young 0 likes 28 plays 0  

High Gain/ Power Amplifier Design At High Mm-wave And Terahertz Frequencies: Embedded Power Amplification

RF-to-THz Electronics and Waves 11 Team Lead: Hadi Bameri Advisor: Prof. Momeni

From  Femi-Jide Akinmoladun 0 likes 18 plays 0