Search for tag: "dbm"
A 200-GHz Stacked-FET Power Amplifier with 18.7 dBm Output Power and 4.8% PAE in 45-nm CMOS SOI- Saleh Hasanzade YamchiAbstract—We report a fully integrated power amplifier (PA) in 45-nm CMOS SOI. Both stacking and parallel power combining are utilized to achieve 18.7 dBm peak output power. Each PA unit uses…
From Philip Young
0 likes
97 plays
0
|
|
High Gain/ Power Amplifier Design At High Mm-wave And Terahertz Frequencies: Embedded Power AmplificationRF-to-THz Electronics and Waves 11 Team Lead: Hadi Bameri Advisor: Prof. Momeni
From Femi-Jide Akinmoladun
0 likes
45 plays
0
|
|
A 162 GHz High Resolution Dielectric Sensing System Based on Ring Resonator SensorRF-to-THz Electronics and Waves 10 Team Lead: Hai Yu Advisor: Prof. Gu
From Femi-Jide Akinmoladun
0 likes
16 plays
0
|