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05:30 Exceeding III-V semiconductor absorption limit in… Exceeding III-V semiconductor absorption limit in thin silicon photodetectors	Exceeding III-V semiconductor absorption limit in thin silicon photodetectors Photonic and Electronic Devices Section 12 Team Lead: Ahmed Mayet Advisor: Prof. Islam silicon photon absorption photodetectors velocity gallium arsenide structures light incident nanometers percent silicone coefficient efficiency holes devices micrometer times improvement From Femi-Jide Akinmoladun 0 likes 24 plays 0
10:01 PN Junction (Part 4): Reverse Bias Example PN Junction (Part 4): Reverse Bias Example	PN Junction (Part 4): Reverse Bias Example junction frequency times capacitance naught oscillation oscillator femto equation micrometer volt power gigahertz lc vector cj centimeter voltage l. resonance From Hooman Rashtian 0 likes 149 plays 0