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Abstract: To scale high-performance computing and datacom system performance in beyond-Moore technologies, critical performance limitations of power efficiency and bandwidth must be resolved. Silicon…
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Color centers are point defects in a crystal lattice that exhibit properties that are useful in quantum technologies. We are building a confocal photoluminescence spectroscopy setup to characterize…
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Color centers are defects in silicon carbide (and other wide bandgap materials), that emerged as nearly-identical quantum emitters. Silicon carbide owing to its decades-long industrial presence, high…
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As transistor scaling trends in VLSI and von Neumann computing begin to slow down, many look to distributed computing techniques as an avenue for further improvements in computing capacity.…
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Abstract: Color centers are solid-state defects in single crystal materials that can emit spin entangled single photons upon excitation. We explore optical mode confinement and optimum color center…
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from Veritasium https://www.youtube.com/watch?v=zNzzGgr2mhk
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from Veritasiumhttps://www.youtube.com/watch?v=IcrBqCFLHIY&t=0s
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Photonic and Electronic Devices 27 Team Lead: Xian Xiao Advisor: Prof Yoo
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Photonic and Electronic Devices 26 Team Lead: Cesar Bartolo Perez Advisor: Prof. Islam
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Photonic and Electronic Devices 23 Team Lead: Pranta Saha Advisor: Prof. Radulaski
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Photonic and Electronic Devices Section 12 Team Lead: Ahmed Mayet Advisor: Prof. Islam
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Title: The Effects of Germanium Concentration on the Thermal Conductivity of Amorphous Silicon-Germanium Authors: Nicholas Lundgren, Giuseppe Barbalinardo, and Davide Donadio Abstract: Many…
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EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering
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