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Characterizing Silicon Vacancies in Silicon… duration 56 seconds Characterizing Silicon Vacancies in Silicon… Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann	Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann Color centers are point defects in a crystal lattice that exhibit properties that are useful in quantum technologies. We are building a confocal photoluminescence spectroscopy setup to characterize… ecexpo 2022 silicon vacancy path laser defect color light sample beam photon centers wavelength photons carbide camera detection filter returns nanometer arrow From Philip Young 0 likes 24 plays 0
A 17 Gb/s 10.7 pJ/b 4FSK Transceiver System for… duration 1 minute 2 seconds A 17 Gb/s 10.7 pJ/b 4FSK Transceiver System for… A 17 Gb/s 10.7 pJ/b 4FSK Transceiver System for Point to Point Communication in 65 nm CMOS - Hamidreza Afzal	A 17 Gb/s 10.7 pJ/b 4FSK Transceiver System for Point to Point Communication in 65 nm CMOS - Hamidreza Afzal Abstract — This paper presents a novel 145-185 GHz transceiver (TRX) with 4 frequency-shift keying (4FSK) modulation. The proposed non-coherent 4FSK design removes the need for separate… ecexpo 2022 frequencies input slide filter pass band signal f3 f2 transmitter transceiver fsk presence measurement micrographs chip cmos nanometer designers bits From Philip Young 0 likes 43 plays 0
Triangular Cross-section Waveguide Geometries in… duration 4 minutes 48 seconds Triangular Cross-section Waveguide Geometries in… Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers	Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers Photonic and Electronic Devices 23 Team Lead: Pranta Saha Advisor: Prof. Radulaski silicon mode wavelength color carbide point intensity width tm surface max te centers nanometer shape respect angle profile fabrication waveguide From Femi-Jide Akinmoladun 0 likes 6 plays 0