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Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann

Color centers are point defects in a crystal lattice that exhibit properties that are useful in quantum technologies. We are building a confocal photoluminescence spectroscopy setup to characterize…

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A 17 Gb/s 10.7 pJ/b 4FSK Transceiver System for Point to Point Communication in 65 nm CMOS - Hamidreza Afzal

Abstract — This paper presents a novel 145-185 GHz transceiver (TRX) with 4 frequency-shift keying (4FSK) modulation. The proposed non-coherent 4FSK design removes the need for separate…

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Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers

Photonic and Electronic Devices 23 Team Lead: Pranta Saha Advisor: Prof. Radulaski

From  Femi-Jide Akinmoladun 0 likes 3 plays 0