00:56duration 56 seconds
Characterizing Silicon Vacancies in Silicon…
Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann
Color centers are point defects in a crystal…
05:40duration 5 minutes 40 seconds
Nanophotonic Devices in 4H-SiC with Integrated…
Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety
Color centers are defects in silicon carbide (and…
01:00duration 1 minute 0 seconds
Triangular Cross-section Waveguide Geometries in…
Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers - Pranta Saha
Abstract: Color centers are solid-state defects…
04:48duration 4 minutes 48 seconds
Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers
Photonic and Electronic Devices 23 Team Lead:…