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Characterizing Silicon Vacancies in Silicon Carbide - Eliana Mann

Color centers are point defects in a crystal lattice that exhibit properties that are useful in quantum technologies. We are building a confocal photoluminescence spectroscopy setup to characterize…

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Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety

Color centers are defects in silicon carbide (and other wide bandgap materials), that emerged as nearly-identical quantum emitters. Silicon carbide owing to its decades-long industrial presence, high…

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Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers - Pranta Saha

Abstract: Color centers are solid-state defects in single crystal materials that can emit spin entangled single photons upon excitation. We explore optical mode confinement and optimum color center…

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Triangular Cross-section Waveguide Geometries in 4H-SiC for Efficient Integration of Color Centers

Photonic and Electronic Devices 23 Team Lead: Pranta Saha Advisor: Prof. Radulaski

From  Femi-Jide Akinmoladun 0 likes 3 plays 0