Search for tag: "holes"

21 Media

Katherine Swanson 2022 WAC - Development of New… duration 5 minutes 51 seconds Katherine Swanson 2022 WAC - Development of New… Katherine Swanson 2022 WAC - Development of New Alfalfa Products in Combination with Almond Hulls for Emerging Domestic & International Markets	Katherine Swanson 2022 WAC - Development of New Alfalfa Products in Combination with Almond Hulls for Emerging Domestic & International Markets alfalfa almond quality digestibility holes matter combinations sheep fiber drops fermentation medium feed study detergent cent characteristics protein hulls diet From Colton Perazzo 0 likes 0 plays 0
Nanophotonic Devices in 4H-SiC with Integrated… duration 5 minutes 40 seconds Nanophotonic Devices in 4H-SiC with Integrated… Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety	Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety Color centers are defects in silicon carbide (and other wide bandgap materials), that emerged as nearly-identical quantum emitters. Silicon carbide owing to its decades-long industrial presence, high… ecexpo 2022 color carbide silicon molecule cavities centers devices holes integration nano cavity metal fabrication levels energy wavelength crystal method angle photoluminescence From Philip Young 0 likes 21 plays 0
How Does a Transistor Work? duration 6 minutes 0 seconds How Does a Transistor Work? How Does a Transistor Work?	How Does a Transistor Work? from Veritasiumhttps://www.youtube.com/watch?v=IcrBqCFLHIY&t=0s semiconductor transistor switch layer transistors depletion holes doping charges bonds silicon electron lattice valence voltage barrier quantum mechanics From John Terning 0 likes 19 plays 0
Exceeding III-V semiconductor absorption limit in… duration 5 minutes 30 seconds Exceeding III-V semiconductor absorption limit in… Exceeding III-V semiconductor absorption limit in thin silicon photodetectors	Exceeding III-V semiconductor absorption limit in thin silicon photodetectors Photonic and Electronic Devices Section 12 Team Lead: Ahmed Mayet Advisor: Prof. Islam silicon photon absorption photodetectors velocity gallium arsenide structures light incident nanometers percent silicone coefficient efficiency holes devices micrometer times improvement From Femi-Jide Akinmoladun 0 likes 25 plays 0
202 Saturating and Draining Media duration 5 minutes 4 seconds 202 Saturating and Draining Media 202 Saturating and Draining Media	202 Saturating and Draining Media Saturating and draining our media with measurements of our container volume. water capacity media height container bottom centimeters holes cylinder meter method edge volume scale attack hour step measurements spots variation From Grant Johnson 0 likes 23 plays 0
MADDD-HenryAdamsSpring2020 duration 56 minutes 43 seconds MADDD-HenryAdamsSpring2020 MADDD-HenryAdamsSpring2020	MADDD-HenryAdamsSpring2020 data science topology applied geometry machine learning homology points machine geometry holes bars circle point lot intervals model shape dataset energy surface bit components fish features From Jesus De Loera 0 likes 36 plays 0
VEN 140 5/01/20 Konrad Miller duration 50 minutes 52 seconds VEN 140 5/01/20 Konrad Miller VEN 140 5/01/20 Konrad Miller	VEN 140 5/01/20 Konrad Miller VEN 140 5/01/2020 Copyright Konrad Miller PhD PE Do no distribute without permission vonmiller@ucdavis.edu tray vapor trays liquid column bubble cap distillation question pressure feed problem trace sieve packing holes efficiency thing kind lot From Konrad Miller 0 likes 56 plays 0
MOS Transistors (Part 9: PMOS Transistors and… duration 10 minutes 42 seconds MOS Transistors (Part 9: PMOS Transistors and… MOS Transistors (Part 9: PMOS Transistors and CMOS Technology)	MOS Transistors (Part 9: PMOS Transistors and CMOS Technology) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering substrate voltage source threshold transistor holes terminal transistors pmos mos equation vgs vds drain regions channel region nmos saturation parameters From Hooman Rashtian 1 likes 206 plays 0
Bipolar Transistors (Part 7: PNP_Transistors).mp4 duration 11 minutes 25 seconds Bipolar Transistors (Part 7: PNP_Transistors).mp4 Bipolar Transistors (Part 7: PNP_Transistors).mp4	Bipolar Transistors (Part 7: PNP_Transistors).mp4 base collector direction voltage vbe ammeter transistor transistors polarity junction emitter region pnp movement electrons holes vb volt vce equation From Hooman Rashtian 0 likes 172 plays 0
Bipolar Transistors (Part 6: Saturation Mode) duration 9 minutes 17 seconds Bipolar Transistors (Part 6: Saturation Mode) Bipolar Transistors (Part 6: Saturation Mode)	Bipolar Transistors (Part 6: Saturation Mode) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering collector junction base volt point current saturation vce region electrons side transistor potential holes bias diode vbe voltage terminal ic From Hooman Rashtian 0 likes 214 plays 0
Bipolar Transistors (Part 4: Base and Emitter… duration 8 minutes 32 seconds Bipolar Transistors (Part 4: Base and Emitter… Bipolar Transistors (Part 4: Base and Emitter Currents)	Bipolar Transistors (Part 4: Base and Emitter Currents) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering beta base emitter collector equation current terminal diode vbe holes electrons kcl currents power transistor proportionality voltage node vt expression From Hooman Rashtian 0 likes 204 plays 0
Bipolar Transistors (Part 2: Forward Active… duration 11 minutes 0 seconds Bipolar Transistors (Part 2: Forward Active… Bipolar Transistors (Part 2: Forward Active Operation)	Bipolar Transistors (Part 2: Forward Active Operation) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering electrons region base collector junction holes depletion emitter density side charge diffusion point direction carriers axis terminal electron field gradient From Hooman Rashtian 0 likes 257 plays 0
PN Junction (Part 5: Forward Bias) duration 7 minutes 49 seconds PN Junction (Part 5: Forward Bias) PN Junction (Part 5: Forward Bias)	PN Junction (Part 5: Forward Bias) region vd junction depletion bias times current holes diffusion width reverse power equation voltage electrons atoms boron ions side terminal From Hooman Rashtian 0 likes 170 plays 0
PN Junction (Part 3): Reverse Bias duration 9 minutes 45 seconds PN Junction (Part 3): Reverse Bias PN Junction (Part 3): Reverse Bias	PN Junction (Part 3): Reverse Bias junction region side depletion battery capacitance bias naught capacitor plates electrons voltage equation equilibrium distance silicon material dielectric width holes From Hooman Rashtian 0 likes 207 plays 0
PN Junction (Part 2: Equilibrium) duration 11 minutes 28 seconds PN Junction (Part 2: Equilibrium) PN Junction (Part 2: Equilibrium)	PN Junction (Part 2: Equilibrium) holes side equation drift electrons dp field diffusion current region depletion magnitude millivolt naught dv log x2 power p. x1 From Hooman Rashtian 0 likes 222 plays 0
PN Junction (Part 1) duration 14 minutes 29 seconds PN Junction (Part 1) PN Junction (Part 1)	PN Junction (Part 1) side holes electrons density junction region material charge atoms field ions electron structure depletion diffusion voltage transfer hole atom phosphorus From Hooman Rashtian 0 likes 290 plays 0