Search for tag: "holes"

20 Media

05:40 Nanophotonic Devices in 4H-SiC with Integrated… Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety	Nanophotonic Devices in 4H-SiC with Integrated Color Centers for Quantum Information Processing - Sridhar Majety Color centers are defects in silicon carbide (and other wide bandgap materials), that emerged as nearly-identical quantum emitters. Silicon carbide owing to its decades-long industrial presence, high… ecexpo 2022 color carbide silicon molecule cavities centers devices holes integration nano cavity metal fabrication levels energy wavelength crystal method angle photoluminescence From Philip Young 0 likes 2 plays 0
06:00 How Does a Transistor Work? How Does a Transistor Work?	How Does a Transistor Work? from Veritasiumhttps://www.youtube.com/watch?v=IcrBqCFLHIY&t=0s electrons semiconductor transistor switch layer semiconductors transistors depletion holes doping charges bonds silicon electron lattice valence law moore voltage barrier From John Terning 0 likes 6 plays 0
05:30 Exceeding III-V semiconductor absorption limit in… Exceeding III-V semiconductor absorption limit in thin silicon photodetectors	Exceeding III-V semiconductor absorption limit in thin silicon photodetectors Photonic and Electronic Devices Section 12 Team Lead: Ahmed Mayet Advisor: Prof. Islam silicon photon absorption photodetectors velocity gallium arsenide structures light incident nanometers percent silicone coefficient efficiency holes devices micrometer times improvement From Femi-Jide Akinmoladun 0 likes 13 plays 0
05:04 202 Saturating and Draining Media 202 Saturating and Draining Media	202 Saturating and Draining Media Saturating and draining our media with measurements of our container volume. water capacity media height container bottom centimeters holes cylinder meter method edge volume scale attack hour step measurements spots variation From Grant Johnson 0 likes 15 plays 0
56:43 MADDD-HenryAdamsSpring2020 MADDD-HenryAdamsSpring2020	MADDD-HenryAdamsSpring2020 data science topology applied geometry machine learning homology points machine geometry holes bars circle point lot intervals model shape dataset energy surface bit components fish features From Jesus De Loera 0 likes 32 plays 0
50:52 VEN 140 5/01/20 Konrad Miller VEN 140 5/01/20 Konrad Miller	VEN 140 5/01/20 Konrad Miller VEN 140 5/01/2020 Copyright Konrad Miller PhD PE Do no distribute without permission [email protected] tray vapor trays liquid column bubble cap distillation question pressure feed problem trace sieve packing holes efficiency thing kind lot From Konrad Miller 0 likes 50 plays 0
10:42 MOS Transistors (Part 9: PMOS Transistors and… MOS Transistors (Part 9: PMOS Transistors and CMOS Technology)	MOS Transistors (Part 9: PMOS Transistors and CMOS Technology) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering substrate voltage source threshold transistor holes terminal transistors pmos mos equation vgs vds drain regions channel region nmos saturation parameters From Hooman Rashtian 1 likes 109 plays 0
11:25 #7_PNP_Transistors.mp4 #7_PNP_Transistors.mp4	#7_PNP_Transistors.mp4 base collector direction voltage vbe ammeter transistor transistors polarity junction emitter region pnp movement electrons holes vb volt vce equation From Hooman Rashtian 0 likes 71 plays 0
09:17 Bipolar Transistors (Part 6: Saturation Mode) Bipolar Transistors (Part 6: Saturation Mode)	Bipolar Transistors (Part 6: Saturation Mode) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering collector junction base volt point current saturation vce region electrons side transistor potential holes bias diode vbe voltage terminal ic From Hooman Rashtian 0 likes 106 plays 0
08:32 Bipolar Transistors (Part 4: Base and Emitter… Bipolar Transistors (Part 4: Base and Emitter Currents)	Bipolar Transistors (Part 4: Base and Emitter Currents) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering beta base emitter collector equation current terminal diode vbe holes electrons kcl currents power transistor proportionality voltage node vt expression From Hooman Rashtian 0 likes 102 plays 0
11:00 Bipolar Transistors (Part 2: Forward Active… Bipolar Transistors (Part 2: Forward Active Operation)	Bipolar Transistors (Part 2: Forward Active Operation) EEC110A: Electronic Circuits I Instructor: Hooman Rashtian Department of Electrical and Computer Engineering electrons region base collector junction holes depletion emitter density side charge diffusion point direction carriers axis terminal electron field gradient From Hooman Rashtian 0 likes 131 plays 0
07:49 PN Junction (Part 5: Forward Bias) PN Junction (Part 5: Forward Bias)	PN Junction (Part 5: Forward Bias) region vd junction depletion bias times current holes diffusion width reverse power equation voltage electrons atoms boron ions side terminal From Hooman Rashtian 0 likes 82 plays 0
09:45 PN Junction (Part 3): Reverse Bias PN Junction (Part 3): Reverse Bias	PN Junction (Part 3): Reverse Bias junction region side depletion battery capacitance bias naught capacitor plates electrons voltage equation equilibrium distance silicon material dielectric width holes From Hooman Rashtian 0 likes 94 plays 0
11:28 PN Junction (Part 2: Equilibrium) PN Junction (Part 2: Equilibrium)	PN Junction (Part 2: Equilibrium) holes side equation drift electrons dp field diffusion current region depletion magnitude millivolt naught dv log x2 power p. x1 From Hooman Rashtian 0 likes 103 plays 0
14:29 PN Junction (Part 1) PN Junction (Part 1)	PN Junction (Part 1) side holes electrons density junction region material charge atoms field ions electron structure depletion diffusion voltage transfer hole atom phosphorus From Hooman Rashtian 0 likes 145 plays 0
08:19 Basics of Semiconductor Physics (Part 7:… Basics of Semiconductor Physics (Part 7: Diffusion Current)	Basics of Semiconductor Physics (Part 7: Diffusion Current) equation electrons dx diffusion concentration holes material charge carriers slope dn proportionality density difference electron current dp factor direction ratio From Hooman Rashtian 0 likes 95 plays 0